EIA7785-6 updated 11/30/2005 7.70-8. 50 ghz 6-watt internally matched power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 1 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised november 2005 yyww .827.010 .421 .004 .669 .105.008 .168.010 all dimensions in inches .125 .508.008 .442 sn .004 .063 .024 .120 min excelics .120 min features ? 7.70? 8.50ghz bandwidth ? input/output impedance matched to 50 ohms ? +38.5 dbm output power at 1db compression ? 10 db power gain at 1db compression ? 36% power added efficiency ? hermetic metal flange package electrical characteristics (t a = 25 c) caution! esd sensitive device. symbol parameters/test conditions 1 min typ max units p 1db output power at 1db compression f = 7.70-8.50ghz v ds = 8 v, i dsq 2000ma 37.5 38.5 dbm g 1db gain at 1db compression f = 7.70-8.50ghz v ds = 8 v, i dsq 2000ma 9 10 db ? g gain flatness f = 7.70-8.50ghz v ds = 8 v, i dsq 2000ma 0.6 db pae power added efficiency at 1db compression v ds = 8 v, i dsq 2000ma f = 7.70-8.50ghz 36 % id 1db drain current at 1db compression f = 7.70-8.50ghz 2200 2500 ma i dss saturated drain current v ds = 3 v, v gs = 0 v 3900 4800 ma v p pinch-off voltage v ds = 3 v, i ds = 39ma -1.0 -2.5 v r th thermal resistance 3 4.0 4.5 o c/w note: 1) tested with 100 ohm gate resistor. 2) s.c.l. = single carrier level. 3) overall rth depends on case mounting. absolute maximum rating 1,2 symbols parameters absolute 1 continuous 2 vds drain-source voltage 12 8v vgs gate-source voltage -5 -3v ids drain current i dss 4.1a igsf forward gate current 61.2ma 20.4ma igsr reserve gate current -10.2ma -3.4ma pin input power 37.5dbm @ 3db compression tch channel temperature 175 o c 175 o c tstg storage temperature -65 to +175 o c -65 to +175 o c pt total power dissipation 33w 33w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals. EIA7785-6
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